Soil additives for promoting seed germination, for prevention of evaporation and methods for use
AssigneeRhodia (China) Co., Ltd.
InventorsGalder Cristobal, Pascal Metivier, Jean-Christophe Castaing, Pengfei Ji, Zhiyun Chen
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Abstract
The present invention relates to methods of improving germination rates of plants or crops, and of preventing or arresting water evaporation loss from targeted soil areas by use of soil additives, which allow for improved water utilization by crops, plants, grasses, vegetation, etc.
Claims18
A method for improving the germination rate of a plant or crop comprising contacting a top layer of a target soil area with a surface additive, whereby the surface additive forms a layer on the target soil area wherein contacting a top layer of a target soil area with a surface additive occurs prior to or during water-stressed conditions, wherein water-stressed conditions means that the target soil area is watered with less than 8 mm of water over at least a 3 day period, over at least a 4 day period, over at least a 5 day period, over at least a 7 day period, or over at least a 10 day period.
A method for improving the germination rate of a plant or crop comprising contacting a top layer of a target soil area with a surface additive, whereby the surface additive forms a layer on the target soil area wherein the surface additive comprises a cationic surfactant and the cationic surfactant is a compound according to formula (I) below:
- wherein R1, R2, R3 and R4, are each independently the same or a different organic group;
- and
- wherein X− is an anion.
A method for improving the germination rate of a plant or crop comprising contacting a top layer of a target soil area with a surface additive, whereby the surface additive forms a layer on the target soil area wherein the surface additive comprises a cationic surfactant and the cationic surfactant is selected from the group consisting of cetyl trimethyl ammonium bromide, cetyl trimethyl ammonium chloride, myristyl trimethyl ammonium bromide, stearyl dimethyl benzyl ammonium chloride, oleyl dimethyl benzyl ammonium chloride, lauryl/myristryl trimethyl ammonium methosulfate, cetyl-dimethyl-(2)hydroxyethyl ammonium dihydrogen phosphate, bassuamidopropylkonium chloride, cocotrimonium chloride, distearyldimonium chloride, wheat germ-amidopropalkonium chloride, stearyl octyldimonium methosulfate, isostearaminopropal-konium chloride, dihydroxypropyl PEG-5 linoleaminium chloride, PEG-2 stearmonium chloride, Quaternium 18, Quaternium 80, Quaternium 82, Quaternium 84, behentrimonium chloride, dicetyl dimonium chloride, behentrimonium methosulfate, tallow trimonium chloride, behenamidopropyl ethyl dimonium ethosulfate, distearyldimonium chloride, dicetyl dimonium chloride, stearyl octyldimonium methosulfate, dihydrogenated palmoylethyl hydroxyethylmonium methosulfate, dipalmitoylethyl hydroxyethylmonium methosulfate, dioleoylethyl hydroxyethylmonium methosulfate, hydroxypropyl bisstearyldimonium chloride, isostearyl benzylimidonium chloride, cocoyl benzyl hydroxyethyl imidazolinium chloride, cocoyl hydroxyethylimidazolinium PG-chloride phosphate, Quaternium 32, stearyl hydroxyethylimidonium chloride, and any combination thereof.
Dependencies are inferred from the claim text.