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US 9,095,869 B2Granted
Atomic layer deposition with plasma source
AssigneePicosun Oy
InventorsVaino Kilpi, Wei-Min Li, Timo Malinen, Juhana Kostamo, Sven Lindfors
Life of this patent
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Abstract
The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
Claims18
A method comprising:
- operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions;
- allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle;
- and
- guiding inert gas towards the reaction chamber via thermal atomic layer deposition in-feed line(s) during the plasma atomic layer deposition period, the thermal atomic layer deposition in-feed line(s) being separate from plasma source line(s) via which radicals are guided into the reaction chamber during the plasma atomic layer deposition period.
1 more element
A plasma atomic layer apparatus, comprising:
- a gas line from an inactive gas source to a widening radical in-feed part opening towards a reaction chamber;
- a control system configured to allow gas from the inactive gas source to flow into in-feed part substantially during a whole deposition cycle, and
- the plasma atomic layer deposition reactor being configured to deposit material in the reaction chamber on at least one substrate by sequential self-saturating surface reactions, and
- the control system being configured to guide inert gas towards the reaction chamber via thermal atomic layer deposition in-feed line(s) during the plasma atomic layer deposition period, the thermal atomic layer deposition in-feed line(s) being separate from plasma source line(s) via which radicals are guided into the reaction chamber during the plasma atomic layer deposition period.
1 more element
Dependencies are inferred from the claim text.