Method for forming a seed layer for the deposition of a metal on a substrate
AssigneesSTMicroelectronics (Tours) SAS, Centre National De La Recherche Scientifique
InventorsClément Barriere, Pierre Fau, Bruno Chaudret, Olivier Margeat
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Abstract
A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, including the step of immersing the substrate in a bath containing a material from the ethoxysilane or siloxane family and a copper or nickel amidinate.
Claims20
A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, comprising the step of immersing the substrate in a bath containing a material from the ethoxysilane family and a copper amidinate, wherein a hydrogen atmosphere is maintained above the bath to have a total pressure ranging between 2,000 and 4,000 hectopascals.
A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, comprising the step of immersing the substrate in a bath containing a material from the ethoxysilane family and a copper amidinate and a photosensitive compound.
A method for forming on a substrate, a seed layer enabling the subsequent deposition of a metal layer, comprising the step of immersing the substrate in a bath containing tetraethoxysilane (TEOS) and a copper amidinate.
Dependencies are inferred from the claim text.