Volatile memory device capable of relieving disturbances of adjacent memory cells and refresh method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Youn Youn, Su-A Kim, Chul-Woo Park, Young-Soo Sohn
Life of this patent
Estimating the term…
Abstract
Provided is a refresh method of a volatile memory device. The method includes: detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased; outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reach a reference value; and performing a refresh operation on the second memory area in response to the alert signal.
Claims20
A refresh method of a volatile memory device, the method comprising:
- detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased;
- outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reaches a reference value;
- and
- performing a refresh operation on the second memory area in response to the alert signal.
A volatile memory device comprising:
- a cell array including a plurality of DRAM cells;
- a disturbance detector configured to count a number of accesses to a first memory area of the cell array and generate a detect signal when the number of the counted accesses reaches a reference value;
- a refresh control logic configured to, in response to the detect signal, perform a refresh operation on a second memory area and a third memory area of the cell array, each being located adjacent to the first memory area;
- and
- an alert generator configured to, in response to the detect signal, output an alert signal from the volatile memory device to an outside of the volatile memory device.
A method of operating a memory device including a memory cell array, the method comprising:
- counting a number of times that a first set of memory cells of the memory cell array is accessed during a first time period;
- when the counted number of times equals to a reference number is detected, activating an alert signal for a period of time and outputting the alert signal from the memory device to the outside of the memory device;
- and
- performing a refresh operation on a second set of memory cells of the memory cell array,
- wherein the second set of memory cells is located adjacent to the first set of memory cells.
Dependencies are inferred from the claim text.