Support structure for TSV in MEMS structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi Heng Tsai, Kuei-Sung Chang, Hung-Chia Tsai
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Abstract
An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.
Claims20
A method for forming a microelectromechanical system (MEMS) device comprising:
- forming a MEMS structure over a first substrate, wherein the MEMS structure comprises a movable element;
- forming a bonding structure over the first substrate;
- forming a support structure over the first substrate;
- bonding the MEMS structure to a second substrate;
- and
- forming a through substrate via (TSV) from a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure, wherein, in a plane parallel to a major surface of the second substrate, the bonding structure has a linear perimeter and the support structure has non-linear perimeter protruding from the linear perimeter of the bonding structure, the non-linear perimeter of the support structure being spaced from an outer perimeter of a projection of the overlying TSV by a constant width.
A semiconductor device comprising:
- a bonding structure over a first substrate;
- a support structure over the first substrate, wherein the support structure protrudes laterally from the bonding structure;
- a second substrate having a frontside and a backside, the second substrate comprising an interconnect structure on the frontside of the second substrate, the second substrate being bonded to the first substrate using the bonding structure and the support structure, the frontside of the second substrate being proximate the first substrate and the backside of the second substrate being distal the first substrate;
- and
- a TSV extending through the second substrate and partially into the interconnect structure, at least a portion of the interconnect structure separating the TSV from the bonding structure and the support structure.
A MEMS device comprising:
- a MEMS structure over a first substrate, wherein the MEMS structure comprises a movable element and an adjacent static element;
- a bonding structure over the static element;
- a second substrate over the MEMS structure, wherein the first substrate, the bonding structure, and the second substrate form a cavity around the MEMS structure;
- and
- a TSV extending through a backside of the second substrate, wherein the bonding structure is configured to support the overlying TSV, wherein the overlying TSV is circular in shape, and wherein at least a portion of an outer edge of the bonding structure surrounding a projection of the overlying TSV has a circular shape.
Dependencies are inferred from the claim text.