Combinatorial method for solid source doping process development
AssigneeIntermolecular, Inc.
InventorKhaled Ahmed
Life of this patent
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Abstract
One or more small spot showerhead apparatus are used to provide dopant exposure and/or to deposit materials using CVD, PECVD, ALD, or PEALD on small spots in a site isolated, combinatorial manner. The small spot showerheads may be configured within a larger combinatorial showerhead to allow multi-layer film stacks to be deposited in a combinatorial manner. Anneal processes where the area of the process can be controlled such as laser annealing or site-isolated rapid thermal processing (RTP) can be used to vary the annealing conditions in a combinatorial manner.
Claims20
A method for doping in a combinatorial manner, the method comprising:
- providing a substrate;
- applying an in-situ clean to a surface of the substrate;
- after the applying, exposing one or more first site-isolated regions on the surface of the substrate to a dopant, wherein the exposing can be varied in a combinatorial manner;
- after the exposing, forming a silicon dioxide layer above each of the first site-isolated regions;
- after the forming, annealing one or more second site-isolated regions defined within each of the first site-isolated regions using one of laser annealing or site-isolated rapid thermal annealing, wherein the annealing can be varied in a combinatorial manner;
- after the annealing, depositing a conductive layer within each of the second site-isolated regions, wherein the depositing can be varied in a combinatorial manner;
- and
- after the depositing, measuring a property within each of the second site-isolated regions.
Dependencies are inferred from the claim text.