Method and means for coupling high-frequency energy to and/or from the nanoscale junction of an electrically-conductive tip with a semiconductor
OwnerMark J. Hagmanninventor
Life of this patent
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Abstract
A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion.
Claims16
A method of coupling at least one electrical apparatus to a nanoscale junction by means of a transmission line with at least two electrical conductors, the junction comprising an electrically conductive tip electrode and a sample, the method comprising:
- a. coupling a bias-T to one end of the transmission line and coupling at least one apparatus to the bias-T;
- b. coupling another end of the transmission line to the nanoscale junction, such that the tip electrode is coupled to one of the at least two conductors of the transmission line;
- and
- c. connecting the sample to another of the at least two conductors of the transmission line;
- wherein, no other apparatus is connected to the nanoscale junction except through the bias-T.
Dependencies are inferred from the claim text.