Copper cleaning and protection formulations
AssigneeAdvanced Technology Materials, Inc.
InventorsJeffrey A. Barnes, Brian Benac, Karl E. Boggs, Lin Feng, Jun Liu, Melissa A. Petruska, Xiaodong Yan, Peng Zhang
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Abstract
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Claims22
A cleaning composition comprising at least one solvent, at least one corrosion inhibitor, at least one amine, and at least one quaternary base, wherein the corrosion inhibitor comprises a species selected from the group consisting of:
- N-ribosylpurine, guanosine, 2-aminopurine riboside, 2-methoxyadenosine, N-methyladenosine, N,N-dimethyladenosine, trimethylated adenosine, trimethyl N-methyladenosine, C-4′ -methyladenosine, 3-deoxyadenosine, methylated adenine, dimethylated adenine, N4,N4-dimethylpyrimidine-4,5,6-triamine, 4,5,6-triaminopyrimidine, allantoin, hydroxylated C—O—O—C dimers, C—C bridged dimers, ribose, methylated ribose, tetramethylated ribose, xylose, glucose, triaminopyrimidine, amino-substituted pyrimidines, and combinations thereof, and wherein the cleaning composition is substantially devoid of corrosion inhibiting metal halides.
A kit comprising, in one or more containers, one or more of the following reagents for forming a cleaning composition, wherein the cleaning composition comprises at least one solvent, at least one corrosion inhibitor, at least one amine, and at least one quaternary base, wherein the corrosion inhibitor comprises a species selected from the group consisting of:
- N-ribosylpurine, guanosine, 2-aminopurine riboside, 2-methoxyadenosine, N-methyladenosine, N,N-dimethyladenosine, trimethylated adenosine, trimethyl N-methyladenosine, C-4′-methyladenosine, 3-deoxyadenosine, methylated adenine, dimethylated adenine, N4,N4-dimethylpyrimidine-4,5,6-triamine, 4,5,6-triaminopyrimidine, allantoin, hydroxylated C—O—O—C dimers, C—C bridged dimers, ribose, methylated ribose, tetramethylated ribose, xylose, glucose, triaminopyrimidine, amino-substituted pyrimidines, and combinations thereof, and wherein the cleaning composition is substantially devoid of corrosion inhibiting metal halides.
A method of removing residue and contaminants from a microelectronic device having said residue and contaminants thereon, said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially clean said residue and contaminants from the microelectronic device, wherein the cleaning composition includes at least one solvent, at least one corrosion inhibitor, at least one amine, and at least one quaternary base, wherein the corrosion inhibitor comprises a species selected from the group consisting of:
- N-ribosylpurine, guanosine, 2-aminopurine riboside, 2-methoxyadenosine, N-methyladenosine, N,N-dimethyladenosine, trimethylated adenosine, trimethyl N-methyladenosine, C-4′-methyladenosine, 3-deoxyadenosine, methylated adenine, dimethylated adenine, N4,N4-dimethylpyrimidine-4,5,6-triamine, 4,5,6-triaminopyrimidine, allantoin, hydroxylated C—O—O—C dimers, C—C bridged dimers, ribose, methylated ribose, tetramethylated ribose, xylose, glucose, triaminopyrimidine, amino-substituted pyrimidines, and combinations thereof, and wherein the cleaning composition is substantially devoid of corrosion inhibiting metal halides.
Dependencies are inferred from the claim text.