Solid state power controller gate control
AssigneeHamilton Sundstrand Corporation
InventorsGregory I. Rozman, Steven J. Moss
Life of this patent
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Abstract
A system for controlling gate power includes a metal oxide semiconductor field effect transistor (MOSFET) configured to supply power to a load according to a gate control voltage applied to a gate of the MOSFET. The system includes a gate control circuit configured to turn on and off the gate control voltage supplied to the gate of the MOSFET. The system also includes a ramping circuit configured to perform at least one of ramping up a voltage applied to the gate of the MOSFET based on the gate control circuit turning on power to the gate of the MOSFET and ramping down the voltage applied to the gate of the MOSFET based on the gate control circuit turning off power to the gate of the MOSFET.
Claims8
A system for controlling gate power, comprising:
- a metal oxide semiconductor field effect transistor (MOSFET) configured to supply power to a load according to a gate control voltage applied to a gate of the MOSFET;
- a gate control circuit configured to turn on and off the gate control voltage supplied to the gate of the MOSFET;
- a ramping circuit configured to perform at least one of ramping up a voltage applied to the gate of the MOSFET based on the gate control circuit turning on power to the gate of the MOSFET and ramping down the voltage applied to the gate of the MOSFET based on the gate control circuit turning off power to the gate of the MOSFET;
- and
- wherein the gate control circuit includes a first pulse transformer to provide power to a positive voltage gate rail and a second pulse transformer to provide power to a negative voltage gate rail.
A system for controlling gate power, comprising:
- a metal oxide semiconductor field effect transistor (MOSFET) configured to supply power to a load according to a gate control voltage applied to a gate of the MOSFET;
- a gate control circuit configured to turn on and off the gate control voltage supplied to the gate of the MOSFET;
- a ramping circuit configured to perform at least one of ramping up a voltage applied to the gate of the MOSFET based on the gate control circuit turning on power to the gate of the MOSFET and ramping down the voltage applied to the gate of the MOSFET based on the gate control circuit turning off power to the gate of the MOSFET;
- wherein the ramping circuit comprises:
- a resistive voltage divider to provide a predetermined negative voltage;
- a first Zener diode configure to protect the gate of the MOSFET from excessive negative voltage;
- at least one second and at least one third Zener diode arranged in series between the negative voltage gate rail and a positive voltage gate rail;
- and
- at least one switch having one end connected between the at least one second and at least one third Zener diodes, such that switching the at least one switch provides an incremental change in a voltage level, less than the full gate voltage, supplied to the gate of the MOSFET.
A method comprising:
- controlling a gate drive circuit to provide power to a gate of a metal oxide semiconductor field effect transistor (MOSFET), the MOSFET configured to control the supply of power to a load;
- controlling the power supplied to the gate of the MOSFET from the gate drive circuit to ramp the voltage level over time to the gate of the MOSFET;
- and
- wherein controlling the power supplied to the gate of the MOSFET to ramp the voltage level over time includes switching at least one analog switch having one end connected between Zener diodes, the Zener diodes connected between a positive voltage rail and a negative voltage rail.
Dependencies are inferred from the claim text.