High frequency power amplifier
AssigneeMitsubishi Electric Corporation
InventorShinichi Miwa
Life of this patent
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Abstract
A high frequency power amplifier includes an FET chip, a wire connected at a first end to the FET chip, an input-side matching circuit substrate, a resistive element on the input-side matching circuit substrate and connected in series with the FET chip, a transmission portion of a conductive material on the input-side matching circuit substrate, in contact with one end of the resistive element, and connected to an input electrode, a wire connection portion of a conductive material on the input-side matching circuit substrate, in contact with a second end of the resistive element, and connected to a second end of the wire, and a shorting portion of a conductive material having a smaller width than the resistive element and on the resistive element, connecting the transmission portion to the wire connection portion.
Claims5
A high frequency power amplifier comprising:
- an FET chip;
- a wire connected at a first end to said FET chip;
- an input-side matching circuit substrate;
- a resistive element located on said input-side matching circuit substrate and connected in series with said FET chip;
- and
- a conductive material located on said input-side matching circuit substrate, wherein said conductive material includes
- a transmission portion in contact with a first end of said resistive element and connected to an input electrode,
- a wire connection portion in contact with a second end of said resistive element, and connected to a second end of said wire, and
- a shorting portion having a smaller width than said resistive element, located on said resistive element, and connecting said transmission portion of said conductive material to said wire connection portion of said conductive material.
Dependencies are inferred from the claim text.