Compound semiconductor device and method for manufacturing the same
AssigneeFujitsu Limited
InventorAtsushi Yamada
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Abstract
An AlGaN/GaN-HEMT has a structure including: compound semiconductor layers formed on a substrate; a gate electrode, a gate pad that has a current path formed between the gate electrode and itself, and a semiconductor layer that is spontaneously polarized and piezoelectrically polarized, which are formed on the compound semiconductor layer; and a gate electrode connection layer formed on the semiconductor layer, wherein the gate electrode connection layer and the gate electrode are electrically connected with each other. This structure which is relatively simple allows the AlGaN/GaN-HEMT to realize an intended normally-off operation without causing such inconveniences as increase in a sheet resistance, increase in an on-resistance, and increase in a leakage current.
Claims8
A method for manufacturing a compound semiconductor device, comprising:
- forming a compound semiconductor layer above a substrate;
- forming a gate electrode above the compound semiconductor layer;
- forming a gate pad that has a current path formed between the gate electrode and itself, above the compound semiconductor layer;
- forming a semiconductor layer that is spontaneously polarized, above the compound semiconductor layer;
- and
- forming a gate connection layer on the semiconductor layer, wherein
- the semiconductor layer is located not under the gate electrode but under the gate connection layer and is arranged above the compound semiconductor layer apart from the gate electrode in a horizontal direction,
- the gate connection layer and the gate electrode are electrically connected with each other.
Dependencies are inferred from the claim text.