Sub-mount having photodiode and light-emitting element module
AssigneeRohm Co., Ltd.
InventorYoshiteru Nagai
Life of this patent
Estimating the term…
Abstract
A sub-mount having a photodiode region, includes a photodiode which has a first conductivity-type layer arranged in a surface portion of the sub-mount of the photodiode region to form a light-receiving surface and a second conductivity-type region arranged below the first conductivity-type layer and is configured to receive at the light-receiving surface a light emitted from a light-emitting element and convert the light into a photocurrent. A peak light-receiving wavelength at which the photocurrent of the photodiode becomes its maximum value is more than or equal to a minimum emission wavelength of the light-emitting element and less than or equal to a maximum emission wavelength of the light-emitting element.
Claims11
A sub-mount having a photodiode region, comprising:
- a laser diode light-emitting element that emits light having an emission wavelength which changes as temperature changes within a range of −10° C. and 90° C.;
- and
- a photodiode having a first conductivity-type layer arranged in a surface portion of the sub-mount in a photodiode region and configured to form a light-receiving surface, and having a second conductivity-type region arranged below the first conductivity-type layer, the photodiode being configured to receive at the light-receiving surface a light emitted from the light-emitting element and to convert the light into a photocurrent,
- wherein the photodiode additionally has a depletion layer generated from the first conductivity-type layer, the depletion layer having a thickness in the range 20 μm to 45 μm;
- and
- wherein a peak light-receiving wavelength at which the photocurrent of the photodiode becomes its maximum value is more than or equal to a minimum emission wavelength of the light-emitting element and less than or equal to a maximum emission wavelength of the light-emitting element.
A light-emitting element module, comprising:
- a laser diode light-emitting element that emits light having an emission wavelength which changes as temperature changes within a range of −10° C. and 90° C.,
- a sub-mount comprising a photodiode having a first conductivity-type layer arranged in a surface portion of the sub-mount in a photodiode region and configured to form a light-receiving surface, and having a second conductivity-type region arranged below the first conductivity-type layer, the photodiode being configured to receive at the light-receiving surface a light emitted from the light-emitting element and to convert the light into a photocurrent,
- wherein the light-emitting element is fixed on a surface of the sub-mount in a light-emitting element region adjacent to the photodiode region,
- wherein the photodiode additionally has a depletion layer generated from the first conductivity-type layer, the depletion layer having a thickness in the range 20 μm to 45 μm, and
- wherein a peak light-receiving wavelength at which the photocurrent of the photodiode becomes its maximum value is more than or equal to a minimum emission wavelength of the light-emitting element and less than or equal to a maximum emission wavelength of the light-emitting element.
Dependencies are inferred from the claim text.