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US 9,070,888 B2Granted
Photoelectronic device and image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Seok Leem, Kyu Sik Kim, Kyung Bae Park, Kwang Hee Lee, Seon-Jeong Lim
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Abstract
A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.
Claims22
A photoelectronic device, comprising:
- a first electrode;
- a second electrode facing the first electrode;
- an active layer between the first electrode and the second electrode;
- and
- an auxiliary layer between the first electrode and the active layer, the auxiliary layer including
- a first auxiliary layer including a metal oxide and an elemental metal, and
- a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.
4 more elements
A photoelectronic device, comprising:
- a first electrode;
- a second electrode facing the first electrode;
- an active layer between the first electrode and the second electrode;
- and
- a first auxiliary layer between the first electrode and the active layer, the first auxiliary layer including a metal oxide and an elemental metal, and having a thickness of less than or equal to about 5 nm.
2 more elements
Dependencies are inferred from the claim text.