Memory elements and methods with improved data retention and/or endurance

#The present disclosure relates generally to memory elements for storing data values, and more particularly to memory elements that can form and dissolve conductive filaments for use in integrated circuits, or the like.

#Memory devices, such as conductive bridging random access memories (CBRAMs), can have memory elements that can be programmed between high and low resistance values to store data. By application of an electric field, CBRAM type memory elements can form conductive regions (i.e., filaments) through a solid electrolyte layer to place the memory element in a low resistance state. A conductive filament can include clusters of metallic elements. Application of an opposing electric field can dissolve such filaments to place the memory element into a high resistance state.

#Performance features of CBRAMs, and similar devices, can include data retention and endurance. Data retention is be the amount of time a memory element can retain a data value after being programmed (i.e., placed into a particular conductive state). Endurance is the number of times a memory element can be programmed to one or more states before its data retention is adversely affected. It is understood that the term “programmed” denotes those operations that place a memory element into a high resistance state as well as a low resistance state.

#FIGS. 1A and 1B are side cross sectional views of a memory element according to an embodiment.

#FIGS. 2A to 2D are a sequence of side cross sectional views showing a method of forming a memory element like that of FIGS. 1A and 1B.

#FIGS. 3A to 3D are a sequence of side cross sectional views showing another method of forming a memory element like that of FIGS. 1A and 1B.

#Below embodiments show memory element structures and methods of fabrication that can result in memory elements having an inhibitor material that can prevent and/or reduce mechanisms that can result in undesired dissolution of conductive filaments within a memory layer.

#FIGS. 1A and 1B show a memory element 100 in side cross sectional views according to an embodiment. A memory element 100 can include a first electrode 102, a modified memory layer 104, and a second electrode 106. A first electrode 102 can be formed from one or more conductive materials, and in one embodiment, can be an “active electrode” that is a source of one or more metals that can oxidize and ion conduct through a memory layer 104. It is noted that in alternate embodiments, a first electrode need not include element(s) that contribute to a conductive filament within modified memory layer 104.

#A modified memory layer 104 can be a layer in which conductive structures (e.g., filaments) can be created and dissolved by application of electric fields. In very particular embodiments, a memory layer 104 can be a solid electrolyte that enables one or more metals to ion conduct between electrodes 102 and 104. In some embodiments, a modified memory layer 104 can include one or more chalcogenide compounds with one or more ion conducting metals incorporated therein. In a very particular embodiment, a memory layer can include GeS2 with silver incorporated therein. In alternate embodiments, a modified memory layer 104 can be metal oxide. Still further, a modified memory layer 104 can be one layer of a multi-layer memory structure formed between two electrodes.