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US 9,070,876 B2Granted
Variable resistance element and semiconductor storage device
AssigneeNEC Corporation
InventorKimihiko Ito
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AssigneeNEC Corporation
InventorKimihiko Ito
Estimating the term…
A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path.
A variable resistance element, comprising:
A variable resistance element, comprising:
A semiconductor storage device comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Switching materials: oxides or nitrides
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: comprising selection components having three or more electrodes, e.g.…
Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching: multistable…
Device geometry: adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
About 5 years 2 months of term left · ends 14 Dec 2031 (estimated)
The present invention relates to a variable resistance element and a semiconductor storage device and in particular relates to a resistance change type non-volatile variable resistance element and a semiconductor storage device.
The most common non-volatile memory in the market today that is represented by a flash memory, a SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) memory, or the like uses a technology by which a threshold voltage of a semiconductor transistor is changed by storing an electric charge in an insulating film formed on a channel.
In order to realize a large capacity non-volatile memory, a fine element structure has to be developed and used. However, a today's fine processing technology almost reaches a limit of processing or the like. Accordingly, it is difficult to miniaturize even a single semiconductor transistor.
FIG. 1 is a sectional view of a semiconductor storage device using a variable resistance element according to an exemplary embodiment of the present invention.
FIG. 2 is a sectional view of a variable resistance element according to an exemplary embodiment.
FIG. 3 is a flowchart showing a manufacturing procedure of a variable resistance element according to an exemplary embodiment.
An exemplary embodiment of the present invention will be described. The variable resistance element may be used as not only a switch that controls interconnection between wirings but also a storage element. In the following explanation of the exemplary embodiment, a case in which the variable resistance element functions as a switch is taken as an example.
FIG. 1 is a sectional view of a semiconductor storage device using a variable resistance element according to an exemplary embodiment of the present invention. This semiconductor storage device 2 includes a transistor 3 and a variable resistance element 4 as a main structure.
The transistor 3 is formed on a semiconductor substrate made of Si or the like and an interlayer insulating film 31 (31a, 31b, and 31c) is formed on it. A source 32 and a drain 33 of the transistor 3 are connected to wirings 34a and 34b including a metal such as W, Al, Cu, or the like provided through the interlayer insulating films 31a and 31b.