Magnetoresistive effect element and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsMakoto Nagamine, Daisuke Ikeno, Katsuya Nishiyama, Katsuaki Natori, Koji Yamakawa
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Abstract
According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.
Claims6
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a tunnel barrier formed on the first ferromagnetic layer;
- and
- a second ferromagnetic layer formed on the tunnel barrier layer,
- wherein the tunnel barrier includes a nonmagnetic oxide having a spinel structure,
- wherein the tunnel barrier includes one material selected from the group consisting of MgTi2O4, MnAl2O4, and CuMn2O4, and
- wherein the first ferromagnetic layer includes an alloy containing cobalt (Co) and iron (Fe).
A manufacturing method of a magnetoresistive effect element, the method comprising:
- forming a tunnel barrier on a first ferromagnetic layer;
- and
- forming a second ferromagnetic layer on the tunnel barrier,
- wherein the tunnel barrier includes a nonmagnetic oxide XYO having a spinel structure,
- wherein the forming the tunnel barrier includes depositing, on the first ferromagnetic layer, an oxide of one of a metal X and a metal Y, which has a higher standard electrode potential, and
- wherein the tunnel barrier includes one material selected from the group consisting of MgTi2O4, MnAl2O4, and CuMn2O4.
Dependencies are inferred from the claim text.