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US 9,070,858 B2Granted
Method, system, and device for storage cell, such as for memory
AssigneeMicron Technology, Inc.
InventorAgostino Pirovano
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein may relate to forming an interface between a selector transistor and a phase change material storage cell in a memory device.
Claims23
A method, comprising:
- forming a phase change material on an emitter region of a selector transistor, the phase change material to be in substantially direct contact with the emitter region of the selector transistor, wherein an interface between the phase change material and the emitter region does not include a silicide.
A memory device, comprising:
- one or more storage cells individually comprising a selector transistor in substantially direct contact with a phase change memory material, wherein an interface between the phase change material and the selector transistor does not include a silicide.
A method, comprising:
- energizing an electrode of a memory array to energize one or more selector transistors of the memory array and to energize one or more phase change memory materials in substantially direct contact with the one or more selector transistors to generate heat sufficient to at least partially melt at least a portion of the one or more phase change memory materials as part of a programming operation, wherein interfaces between the phase change materials and the selector transistors do not include a silicide.
A method of programming a phase change memory cell comprising:
- melting at least a portion of a phase change material by heating an interface between the phase change material and an emitter of a selector transistor in substantially direct contact with the phase change memory cell, wherein the interface does not include a silicide.
Dependencies are inferred from the claim text.