Light emitting device package and manufacturing method thereof

A method for manufacturing a light emitting device (LED) package, comprising steps of:

• preparing a first substrate that comprises a sapphire substrate, an LED on the sapphire substrate formed with a first electrode pad and a second electrode pad disposed on one surface of the LED, and a bonding insulating pattern layer exposing the first electrode pad and the second electrode pad;
• preparing a second substrate that comprises a plurality of via holes bored from a first surface to a second surface, and a wiring metal layer formed on inner surfaces of the plurality of via holes, extending to a part of the second surface;
• forming a bonding metal pattern layer to be bonded to the wiring metal layer exposed through the plurality of via holes at the first surface of the second substrate;
• mounting the first substrate to the second substrate such that the first electrode pad and the second electrode pad face the bonding metal pattern layer;
• bonding the first substrate and the second substrate by melting the bonding insulating pattern layer at a predetermined temperature and pressing the first substrate from an upper part;
• forming an uneven surface pattern on the first substrate by removing the sapphire substrate and etching an exposed surface of the first substrate;
• forming an insulating layer and a phosphor resin layer sequentially on the uneven surface pattern of the first substrate;
• and
• manufacturing the LED package separated into unit chips by processing the first substrate and the second substrate, so that a size of the bonding insulating pattern layer is substantially the same as a size of the second substrate,
• wherein the step of preparing the first substrate comprises:
• forming a light emission structure comprising a first nitride-based semiconductor layer, an active layer, and a second nitride-based semiconductor layer, on the sapphire substrate;
• etching the active layer and the second nitride-based semiconductor layer so that a part of the first nitride-based semiconductor layer is exposed;
• forming the first electrode pad on the first nitride-based semiconductor layer and forming the second electrode pad on the second nitride-based semiconductor layer;
• after processing by oxygen plasma one surface of the light emission structure where the first electrode pad and the second electrode pad are formed, coating a bonding insulating material to cover the first electrode pad and the second electrode pad on one surface where the first electrode pad and the second electrode pad are formed;
• and
• forming the bonding insulating pattern layer by patterning the bonding insulating material so that the first electrode pad and the second electrode pad are exposed.