Ultraviolet semiconductor light-emitting element that emits ultraviolet light from one surface side

An ultraviolet semiconductor light-emitting element, comprising:

• a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer;
• an n-electrode that is in contact with the n-type nitride semiconductor layer;
• and
• a p-electrode that is in contact with the p-type nitride semiconductor layer,
• wherein a depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer facing the light-emitting layer so as to avoid an region on which the p-electrode is formed,
• a reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part,
• in the ultraviolet semiconductor light-emitting element, the ultraviolet light emitted from the light-emitting layer is taken out from an opposite side of the n-type nitride semiconductor layer from the light-emitting layer, and
• a depth of the depressed part is less than a thickness of the p-type nitride semiconductor layer.