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AssigneeKabushiki Kaisha Toshiba
InventorsShinji Yamada, Hiroshi Katsuno, Satoshi Mitsugi, Shinya Nunoue
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According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion.
A semiconductor light emitting device comprising:
A semiconductor light emitting device comprising:
A semiconductor light emitting device comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Packages: wavelength conversion means
Constructional details: electrodes
Electrodes: characterised by their shape
Packages: containers
About 6 years 4 months of term left · ends 28 Feb 2033 (estimated)
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2012-256725, filed on Nov. 22, 2012; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a semiconductor light emitting device and method for manufacturing same.
Semiconductor light emitting devices such as light emitting diodes and laser diodes are known. In semiconductor light emitting devices, improvement of heat dissipation is desired. For instance, due to heat generation, the resistance of the semiconductor crystal around the electrode may be decreased and locally form a path where the current easily flows. In this case, for instance, the decrease of light emission uniformity and the crystal degradation are more likely to occur. Furthermore, in a semiconductor light emitting device including a wavelength conversion layer made of e.g. phosphor, the temperature increase of the wavelength conversion layer may change the characteristics of the wavelength conversion layer.
FIGS. 1A and 1B are schematic views showing a semiconductor light emitting device according to a first embodiment;
FIGS. 2A to 2D, 3A to 3D, 4A to 4D, and 5A to 5C are schematic sectional views showing the method for manufacturing a semiconductor light emitting device according to the first embodiment;
FIGS. 6A to 6D, 7A to 7D, 8A to 8D, and 9A to 9C are schematic sectional views showing an alternative method for manufacturing a semiconductor light emitting device according to the first embodiment;
In general, according to one embodiment, a semiconductor light emitting device includes: a stacked body including: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type spaced from the first semiconductor layer in a first direction; and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a first side surface non-parallel to a plane perpendicular to the first direction; a wavelength conversion layer configured to convert wavelength of light emitted from the first light emitting layer, the first semiconductor layer being placed between the first light emitting layer and the wavelength conversion layer; a first metal layer including: a first side surface portion opposed to at least part of the wavelength conversion layer, and the first side surface; and a first bottom surface portion opposed to the second semiconductor layer, the first metal layer being electrically connected to the second semiconductor layer; and a first insulating section provided between the first side surface and the first side surface portion and between the wavelength conversion layer and the first side surface portion, and electrically insulating between the first semiconductor layer and the first metal layer.
In general, according to another embodiment, a method for manufacturing a semiconductor light emitting device is provided. The method includes: preparing a workpiece including: a substrate; and a stacked film stacked on the substrate in a first direction and including: a first semiconductor film of a first conductivity type; a second semiconductor film of a second conductivity type, the first semiconductor film being placed between the substrate and the second semiconductor film; and a light emitting film provided between the first semiconductor film and the second semiconductor film; forming in the workpiece a trench exposing a first side surface non-parallel to a plane perpendicular to the first direction of the first semiconductor film by removing part of the second semiconductor film, part of the light emitting film, and part of the first semiconductor film; forming an insulating film on the workpiece provided with the trench; forming on the insulating film a metal film including a bottom surface portion opposed to the second semiconductor film and a side surface portion opposed to the first side surface by depositing a metal material on the insulating film to fill the trench with the metal material; removing the substrate to expose a stacked body including: a first semiconductor layer formed from the first semiconductor film and having the first side surface; a light emitting layer formed from the light emitting film; and a second semiconductor layer formed from the second semiconductor film; and forming on the stacked body a wavelength conversion layer, at least part of the wavelength conversion layer being opposed to the side surface portion.
Embodiments will now be described with reference to the drawings.