Semiconductor light-emitting device

A semiconductor light-emitting device comprising:

• a lamination of semiconductor layers including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer;
• a transparent conductive film formed on a first principal surface of the lamination of semiconductor layers and having an opening, wherein the opening includes a pad area and a plurality of wiring electrode areas extending from the pad area, and the opening is provided in the transparent conductive film such that the transparent conductive film surrounds the opening;
• a pad electrode formed on a first part of the first principal surface, the first part of the first principal surface being exposed in the pad area of the opening of the transparent conductive film, wherein the pad electrode has a shape which substantially corresponds to a shape of the pad area of the opening;
• and
• a plurality of wiring electrode portions formed on a plurality of other parts of the first principal surface excluding the first part, wherein the plurality of other parts are exposed in the plurality of wiring electrode areas of the opening of the transparent conductive film, each of the plurality of wiring electrode portions is connected with the pad electrode and overlaps with a part of the transparent conductive film, and the plurality of wiring electrode portions have a shape which substantially corresponds to a shape of the plurality of wiring electrode areas of the opening;
• wherein a contact resistance between the transparent conductive film and the lamination of semiconductor layers is larger than a contact resistance between the plurality of wiring electrode portions and the lamination of semiconductor layers.