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AssigneeSamsung Electronics Co., Ltd.
InventorsJu Heon Yoon, Sang Yeon Kim, Seung Hwan Lee, Jin Hyun Lee, Wan Tae Lim, Hyun Kwon Hong
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A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
A semiconductor light emitting device comprising:
A semiconductor light emitting device comprising:
Dependencies are inferred from the claim text.
From the US filing history. Foreign family members aren’t listed.
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Characterised by their shape: extending at least partially through the bodies
Electrodes: characterised by their material
Constructional details: coatings, e.g. passivation layers or antireflective coatings
Manufacture or treatment: of electrodes
About 7 years 2 months of term left · ends 2 Jan 2034 (estimated)
This application claims the priority to, and the benefit of, Korean Patent Application No. 10-2013-0043386 filed on Apr. 19, 2013, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.
The present disclosure relates to a semiconductor light emitting device.
A light emitting diode (LED) is a semiconductor device which is able to emit light of various colors due to electron-hole recombination occurring at a p-n junction between p-type and n-type semiconductors when current is applied thereto. Such an LED is advantageous over a filament-based light emitting device in that it has a relatively long lifespan, low power consumption, superior initial-operation characteristics, and the like. These factors have continually boosted the demand for LEDs. Notably of late, a great deal of attention has been given to group III nitride semiconductors that can emit light in a blue/short wavelength region.
The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic cross-sectional view illustrating a semiconductor light emitting device according to an exemplary embodiment of the present disclosure;
FIGS. 2A and 2B are schematic plan views illustrating a semiconductor light emitting device according to an exemplary embodiment of the present disclosure;
Exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings.
Inventive concepts may, however, be exemplified in many different forms and should not be construed as being limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those having ordinary skill in the art.
In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same or like reference numerals will be used throughout to designate the same or like elements.