Semiconductor light emitting device

#This application claims priority to, and benefit of, Korean Patent Application No. 10-2013-0069962 filed on Jun. 18, 2013, with the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.

#The present disclosure relates to a semiconductor light emitting device.

#Semiconductor light emitting devices emit light through the recombination of electrons and holes when a current is applied thereto and are commonly used as light sources due to various advantages thereof such as low power consumption, high levels of luminance, compactness, and the like. In particular, after the development of nitride light emitting devices, the utilization thereof has been greatly expanded and nitride light emitting devices are commonly employed as light sources in backlight units used for displays, general illumination devices, electrical systems, and the like. Various attempts have been made to improve the characteristics of semiconductor light emitting devices. In particular, a need exists for the development of an electrode structure improving luminance efficiency and lowering an operational voltage by evenly distributing (or spreading) currents within light emitting devices.

#The above and other aspects, features and other advantages of the present inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which like reference characters may refer to the same or similar parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the embodiments of the present inventive concept. In the drawings, the thickness of layers and regions may be exaggerated for clarity.

#FIG. 1 is a schematic plan view of a semiconductor light emitting device according to an embodiment of the present inventive concept.

#FIG. 2 is a cross-sectional view schematically illustrating the semiconductor light emitting device taken along line I-I′ of FIG. 1.

#Hereinafter, embodiments of the present inventive concept will be described in detail with reference to the accompanying drawings.

#The inventive concept may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like components.

#FIG. 1 is a schematic plan view of a semiconductor light emitting device 100 according to an embodiment of the present inventive concept. FIG. 2 is a cross-sectional view schematically illustrating the semiconductor light emitting device 100 taken along line I-I′ of FIG. 1.