Method for producing photoelectric conversion element

#The present invention relates to a method for producing a photoelectric conversion element.

#Various types of photoelectric conversion elements using monocrystalline silicon, polycrystalline silicon, or amorphous silicon have been developed. As an example, Patent Document 1 discloses a photoelectric conversion element comprising a semiconductor substrate composed of monocrystalline silicon having a light-receiving surface and a backside surface provided opposite to the light-receiving surface; a first semiconductor layer and a second semiconductor layer both composed of amorphous silicon which are formed along a predetermined direction on the backside surface, in which layers having different conductivity types are alternately arranged on the backside surface; an insulating layer formed to span from above the second semiconductor layer to above the first semiconductor layer; a transparent electrode layer covering the first semiconductor layer and the second semiconductor layer; and a collector electrode layer formed on the transparent electrode layer.

#Patent Document 1: JP 2009-200267 A

#FIG. 1 is a cross-sectional view of a photoelectric conversion element according to an embodiment of the present invention.

#FIG. 2 is a flowchart showing steps of a method for producing a photoelectric conversion element according to the embodiment of the present invention.

#FIG. 3 is a cross-sectional view for illustrating the steps of the method for producing a photoelectric conversion element according to the embodiment of the present invention.

#An embodiment of the present invention will be described in detail below with reference to the drawings. In the following description, similar elements are denoted by the same reference numerals throughout all of the drawings, and the same description will not be repeated. Also, in the description herein, reference numerals used earlier will be used as necessary.

#FIG. 1 is a cross-sectional view of a photoelectric conversion element 10. The photoelectric conversion element 10 includes an antireflection layer 12, an n-type amorphous silicon layer 14, an i-type amorphous silicon layer 16, an n-type monocrystalline silicon substrate 18, an i-n multilayer portion 21, an i-p multilayer portion 31, an insulating layer 24, an n-side electrode portion 25, and a p-side electrode portion 35. In FIG. 1, an arrow A represents the direction in which light such as sunlight is incident on the photoelectric conversion element 10. It should be noted that the term “light-receiving surface” refers to a surface on which light such as sunlight is mainly incident. Further, the term “backside surface” refers to a surface opposite to the light-receiving surface.

#The n-type monocrystalline silicon substrate 18 is a power generation layer that generates carriers in response to light incident through the light-receiving surface. It should be noted that although the n-type monocrystalline silicon substrate 18 is used in the present embodiment, the present invention is not limited to this embodiment. A crystalline semiconductor substrate having an n-type or p-type conductivity may be used. Rather than a monocrystalline silicon substrate, for example, a polycrystalline silicon substrate, a gallium arsenide substrate (GaAs), an indiumphosphide substrate (InP), or the like may be used.