Methods and structures for bonding elements
AssigneeSoitec
InventorChantal Arena
Life of this patent
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Abstract
Embodiments of the invention relate to methods and structures for fabricating semiconductor structures that include at least one bonding layer for attaching two or more elements to one another. The at least one bonding layer may be at least substantially comprised of zinc, silicon and oxygen.
Drawings
Claims19
A method for fabricating a semiconductor structure comprising:
- providing a bonding layer at least substantially comprised of zinc, silicon and oxygen on a surface of at least one of a first element and a second element, each of the first element and the second element comprising crystalline semiconductor material, the bonding layer being electrically conductive and transparent to light;
- formulating a percentage concentration of silicon in the bonding layer to increase proximate to an exposed surface thereof such that a composition of the bonding layer is at least substantially comprised of silicon oxide within a distance adjacent to the exposed surface thereof, the distance being sufficiently small to at least substantially preserve electrical conductivity of the bonding layer through the silicon oxide;
- disposing the bonding layer between the first element and the second element;
- and
- attaching the first element and the second element to one another at a bonding interface using the bonding layer disposed between the first element and the second element such that the first element and the second element are optically and electrically coupled to one another through the bonding layer.
A semiconductor structure, comprising:
- a first element and a second element, each of the first element and the second element comprising crystalline semiconductor material, and
- at least one bonding layer disposed between and bonding together the first element and the second element, the at least one bonding layer at least substantially comprised of zinc, silicon and oxygen, the at least one bonding layer being electrically conductive and transparent to light, the first element and the second element being optically and electrically coupled to one another through the at least one bonding layer, a percentage concentration of silicon in the at least one bonding layer increasing proximate to a bonding interface between the at least one bonding layer and at least one of the first element and the second element such that a composition of the at least one bonding layer is at least substantially comprised of silicon oxide within a distance adjacent to the bonding interface, the distance being sufficiently small to at least substantially preserve electrical conductivity of the at least one bonding layer through the silicon oxide.
A semiconductor structure, comprising:
- a first element and a second element, each of the first element and the second element comprising crystalline semiconductor material, and
- at least one bonding layer disposed between and physically, optically, and electrically coupling the first element and the second element, the at least one bonding layer formed by molecularly bonding the first element with the second element, and being electrically conductive and transparent to light, and at least substantially comprising zinc, silicon, and oxygen, a percentage concentration of silicon in the at least one bonding layer increasing proximate to a bonding interface between the at least one bonding layer and at least one of the first element and the second element such that a composition of the at least one bonding layer is at least substantially comprised of silicon oxide within a distance adjacent to the bonding interface, the distance being sufficiently small to at least substantially preserve electrical conductivity of the at least one bonding layer through the silicon oxide.
Dependencies are inferred from the claim text.