Solid state imaging device with microlens shifted from the center of the photo diode
AssigneeFUJIFILM Corporation
InventorMitsuru Okigawa
Life of this patent
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Abstract
A CCD image sensor, being a solid state imaging device, has four types of pixels, first to fourth pixels. The first to fourth pixels are arranged in a predetermined pattern. Each of the pixels has a PD and a microlens. Each of the microlens is arranged with its optical axis center eccentric or shifted in a predetermined direction from a center of a light receiving surface of the PD. A part of the microlens overlaps one or more adjacent pixels.
Claims17
A solid state imaging device having a plurality of phase difference detection pixels arranged adjacent to each other, the phase difference detection pixels each comprising:
- a photoelectric converter for photoelectrically converting incident light into charge and accumulating the charge;
- and
- a microlens provided to the each photoelectric converter, an optical axis of the microlens being eccentric to a center of the photoelectric converter such that a part of the microlens overlaps the adjacent phase difference detection pixel, the microlens condensing the light onto the photoelectric converter,
- wherein the phase difference detection pixels include:
- a first pixel with the microlens arranged eccentrically in a predetermined eccentricity direction;
- a second pixel with the microlens arranged eccentrically opposite to the eccentricity direction;
- a third pixel with the microlens arranged eccentrically in an orthogonal direction substantially orthogonal to the eccentricity direction;
- and
- a fourth pixel with the microlens arranged eccentrically opposite to the orthogonal direction.
A solid state imaging device having a plurality of phase difference detection pixels arranged adjacent to each other, the phase difference detection pixels each comprising:
- a photoelectric converter for photoelectrically converting incident light into charge and accumulating the charge;
- and
- a microlens provided to the each photoelectric converter, an optical axis of the microlens being eccentric to a center of the photoelectric converter such that a part of the microlens overlaps the adjacent phase difference detection pixel, the microlens condensing the light onto the photoelectric converter,
- wherein the phase difference detection pixels include first pixels each having the microlens arranged eccentrically in a predetermined eccentricity direction and second pixels each having the microlens arranged eccentrically opposite to the eccentricity direction, and
- the solid state imaging device includes first pixel rows each having the first pixels arranged in the eccentricity direction and second pixel rows each having the second pixels arranged in the eccentricity direction, and
- the first and second pixel rows are arranged alternately in a direction orthogonal to the eccentricity direction, and
- a part of the microlens of the first pixel overlaps a part of the adjacent first pixel, and
- a part of the microlens of the second pixel overlaps a part of the adjacent second pixel.
A solid state imaging device having a plurality of phase difference detection pixels arranged adjacent to each other, the phase difference detection pixels each comprising:
- a photoelectric converter for photoelectrically converting incident light into charge and accumulating the charge;
- and
- a microlens provided to the each photoelectric converter, an optical axis of the microlens being eccentric to a center of the photoelectric converter such that a part of the microlens overlaps the adjacent phase difference detection pixel, the microlens condensing the light onto the photoelectric converter,
- wherein the phase difference detection pixels include first pixels each having the microlens arranged eccentrically in a predetermined eccentricity direction and second pixels each having the microlens arranged eccentrically opposite to the eccentricity direction, and
- the solid state imaging device includes first pixel rows each having the first pixels arranged in the eccentricity direction and the second pixel rows each having the second pixels arranged in the eccentricity direction, and
- the two first pixel rows and the two second pixel rows are arranged in this order repeatedly in a direction substantially orthogonal to the eccentricity direction, and
- a part of the microlens of the first pixel overlaps a part of the adjacent first pixel, and
- a part of the microlens of the second pixel overlaps a part of the adjacent second pixel.
A solid state imaging device having a plurality of phase difference detection pixels arranged adjacent to each other, the phase difference detection pixels each comprising:
- a photoelectric converter for photoelectrically converting incident light into charge and accumulating the charge;
- and
- a microlens provided to the each photoelectric converter, an optical axis of the microlens being eccentric to a center of the photoelectric converter such that a part of the microlens overlaps the adjacent phase difference detection pixel, the microlens condensing the light onto the photoelectric converter,
- wherein a part of the microlens overlaps the adjacent phase difference detection pixel, and the microlens comes in contact with the microlens of the adjacent phase difference detection pixel.
Dependencies are inferred from the claim text.