III-V heterojunction light emitting diode
AssigneeInternational Business Machines Corporation
InventorsTze-Chiang Chen, Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
Life of this patent
Estimating the term…
Abstract
A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer.
Claims11
A light emitting device, comprising:
- a monocrystalline III-V emissive layer having a cleaved surface created by a spalling process;
- a first doped layer formed on the cleaved surface of the emissive layer having a microcrystalline or nanocrystalline crystal structure;
- a first contact formed on the first doped layer;
- a second doped layer formed on the emissive layer on a side opposite that of the cleaved surface;
- and
- a second contact formed on the second doped layer.
A light emitting device, comprising:
- a monocrystalline III-V emissive layer;
- a hot-carrier-tunneling injector (HTI) layer present on the emissive layer;
- a first doped layer present on the hot-carrier-tunneling injector (HTI) layer;
- a first contact formed on the first doped layer;
- a second doped layer present on a side of the emissive layer that is opposite a side of the emissive layer that the hot-carrier tunneling injector (HTI) layer is present on;
- and
- a second contact formed on the second doped layer.
Dependencies are inferred from the claim text.