Vertical semiconductor device and method of manufacturing thereof

An n-channel semiconductor diode, comprising:

• a semiconductor body comprising a semiconductor material that has a band-gap higher than about two electron volts and extending between a first surface and a second surface which runs substantially parallel to the first surface;
• an anode metallization arranged on the first surface;
• and
• a cathode metallization arranged on the second surface;
• wherein, in a sectional plane substantially perpendicular to the first surface, the semiconductor body comprises:
• an n-doped first semiconductor region in ohmic contact with the cathode metallization;
• at least two p-doped second semiconductor regions in ohmic contact with the anode metallization, spaced apart from one another, and forming respective first pn-junctions with the first semiconductor region;
• and
• at least one p-doped embedded semiconductor region in ohmic contact with the anode metallization, forming a second pn-junction with the first semiconductor region, and arranged in a direction substantially perpendicular to the first surface between the second surface and the at least two p-doped second semiconductor regions,
• wherein at least a portion of the at least one p-doped embedded semiconductor region is, in a projection onto the first surface, arranged between two of the at least two p-doped second semiconductor regions.

A vertical semiconductor device, comprising:

• a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface;
• a first metallization arranged on the first surface;
• and
• a second metallization arranged on the second surface;
• wherein, in a sectional plane substantially perpendicular to the first surface, the semiconductor body comprises:
• an n-doped first semiconductor region in ohmic contact with the second metallization;
• a plurality of p-doped second semiconductor regions in ohmic contact with the first metallization, substantially extending to the first surface, spaced apart from one another and forming respective first pn-junctions with the first semiconductor region;
• and
• a plurality of p-doped embedded semiconductor regions, spaced apart from one another, from the p-doped second semiconductor regions, from the first surface and from the second surface, and forming respective second pn-junctions with the first semiconductor region,
• wherein the p-doped embedded semiconductor regions are in ohmic contact with the first metallization.