Integrated circuit with a thin body field effect transistor and capacitor

A circuit supporting substrate comprising:

• a transistor including:
• a buried insulator layer;
• a first semiconductor layer, the first semiconductor layer being located on the buried insulator layer and comprising at least one of silicon, germanium and indium;
• a gate stack located on the first semiconductor layer, the gate stack comprising a metal layer and a first high-k dielectric layer;
• a gate spacer located on sidewalls of the gate stack, the first high-k dielectric layer being located between the first semiconductor layer and the metal layer, and between the gate spacer and sidewalls of the metal layer, the first high-k dielectric layer comprising a portion that is below and in contact with the metal layer;
• first and second source/drain regions formed in a second semiconductor layer that is located on and in contact with the first semiconductor layer, the first and second source/drain regions being located on opposite sides of the gate stack, and the first and second source/drain regions each comprising a top surface that is above a bottom surface of the gate stack;
• a first silicide region located on the first source/drain region;
• and
• a second silicide region located on the second source/drain region;
• and
• a capacitor including:
• a first terminal comprising a third silicide region located on a portion of the second semiconductor layer that is located on and in contact with the first semiconductor layer;
• a second high-k dielectric layer located on the silicide region;
• and
• a second terminal comprising a metal layer that is located on the second high-k dielectric layer.