Semiconductor device with low on resistance and high breakdown voltage

A method of manufacturing a semiconductor device, the method comprising:

• forming an epitaxial layer of semiconductor material of a first conductivity type having a main surface;
• forming a body region of a second conductivity type opposite the first conductivity type which extends into the epitaxial layer from the main surface;
• forming a source region of the first conductivity type in the body region;
• forming a channel region which extends laterally in the body region from the source region along the main surface of the epitaxial layer;
• forming a charge compensation region of the second conductivity type under the body region;
• and
• forming an additional region of the first conductivity type in the epitaxial layer adjacent the body region, the additional region having at least one peak doping concentration each of which occurs deeper in the epitaxial layer from the main surface than a peak doping concentration of the channel region.

A semiconductor device, comprising:

• an epitaxial layer of semiconductor material of a first conductivity type having a main surface;
• a body region of a second conductivity type opposite the first conductivity type extending into the epitaxial layer from the main surface;
• a source region of the first conductivity type disposed in the body region;
• a groove extending from the main surface of the epitaxial layer through the source region into the body region, the groove being narrower than the body region;
• and
• a charge compensation region of the second conductivity type disposed under the body region in alignment with the groove, the charge compensation region extending in a direction parallel to the main surface of the epitaxial layer and terminating prior to a pn-junction between the source region and the body region at the main surface.

A method of manufacturing a semiconductor device, the method comprising:

• forming an epitaxial layer of semiconductor material of a first conductivity type having a main surface;
• forming a body region of a second conductivity type opposite the first conductivity type which extends into the epitaxial layer from the main surface;
• forming a source region of the first conductivity type in the body region;
• forming a groove extending from the main surface of the epitaxial layer through the source region into the body region, the groove being narrower than the body region;
• and
• forming a charge compensation region of the second conductivity type under the body region in alignment with the groove, the charge compensation region extending in a direction parallel to the main surface of the epitaxial layer and terminating prior to a pn-junction between the source region and the body region at the main surface.