Back to results
US 9,070,761 B2Granted
Field effect transistor (FET) having fingers with rippled edges
AssigneeRF Micro Devices, Inc.
InventorJoseph Herbert Johnson
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeRF Micro Devices, Inc.
InventorJoseph Herbert Johnson
Estimating the term…
A field effect transistor (FET) having fingers with rippled edges is disclosed. The FET includes a semiconductor substrate having a front side with a finger axis. A drain finger is disposed on the front side of the semiconductor substrate such that a greatest dimension of the drain finger lies parallel to the finger axis. A gate finger is disposed on the front side of the semiconductor substrate. The gate finger is spaced from the drain finger such that a greatest dimension of the gate finger lies parallel to the finger axis. A source finger is disposed on the front side of the semiconductor substrate. The source finger is spaced from the gate finger such that a greatest dimension of the source finger lies parallel to the finger axis. The drain finger, the gate finger, and the source finger each have rippled edges with an axis parallel with the finger axis.
A field effect transistor (FET) having an active region comprising:
A method of fabricating a field effect transistor (FET) having an active region comprising:
Dependencies are inferred from the claim text.