Method and apparatus for plasma dicing a semi-conductor wafer

A method for plasma dicing a substrate, the method comprising:

• providing a process chamber having a wall;
• providing a plasma source adjacent to the wall of the process chamber;
• providing a work piece support within the process chamber;
• providing an electrostatic chuck within said work piece support, said electrostatic chuck having at least one clamping electrode;
• providing a cover ring, the clamping electrode overlapping a portion of an unshielded seal band region that is not covered by the cover ring;
• placing a work piece onto said work piece support, said work piece having a support film, a frame and the substrate, the support film overlapping the seal band region;
• generating a plasma using the plasma source;
• etching the work piece using the generated plasma;
• and
• electrostatically clamping said work piece to said work piece support using said electrostatic clamp during said etching step, the clamping electrode of the electrostatic chuck clamping a portion of the support film that is exposed to the generated plasma during said etching step.

A method for plasma dicing a substrate, the method comprising:

• providing a process chamber having a wall;
• providing a plasma source adjacent to the wall of the process chamber;
• providing a work piece support within the process chamber;
• providing an electrostatic chuck within said work piece support, said electrostatic chuck having a seal band, a fluid inlet and at least one clamping electrode;
• providing a cover ring;
• placing a work piece onto said work piece support, said work piece having a support film, a frame and the substrate;
• generating a plasma using the plasma source;
• etching the work piece using the generated plasma;
• and
• electrostatically clamping said work piece to said work piece support using said electrostatic clamp during said etching step, said clamping electrode of the electrostatic chuck overlapping a portion of said seal band that is not overlapped by said cover ring during said etching step.