Semiconductor device channels

A method of manufacturing a semiconductor device, comprising:

• establishing a signal conductor layer formed of an insulating material and channels, the signal conductor layer including a first channel bordered on at least three edges by the insulating material and a second channel bordered on at least three edges by the insulating material;
• introducing a dielectric material to at least the second channel;
• introducing a photoresist material to at least one of the signal conductor layer or the dielectric material;
• exposing at least a portion of at least one of the dielectric material or the photoresist material;
• removing a first portion of the dielectric material and retaining a second portion of the dielectric material;
• removing the photoresist material;
• and
• introducing a conductive material to the signal conductor layer, including:
• introducing the conductive material in the first channel, wherein the conductive material in the first channel touches the insulating material, and
• introducing the conductive material in the second channel, wherein the conductive material in the second channel touches the insulating material.

A method of manufacturing a semiconductor device, comprising:

• establishing a signal conductor layer formed of an insulating material and channels, the signal conductor layer having:
• a first channel and a second channel, the first channel and the second channel having a substantially equivalent cross-sectional area, and
• the insulating material bordering at least three edges of the first channel and bordering at least three edges of the second channel;
• introducing a spacer dielectric on a side of the second channel, wherein portions of at least two sides of the second channel do not include the spacer dielectric;
• introducing a first conductor in the first channel having a first cross-sectional area;
• and
• introducing a second conductor in the second channel having a second cross-sectional area, the second cross sectional area smaller than the first cross sectional area.