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US 9,070,749 B2Granted
Semiconductor device including fluorine-free tungsten barrier layer and method for fabricating the same
AssigneeSK hynix Inc.
InventorDong-Kyun Kang
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Abstract
A method of forming a fluorine-free tungsten diffusion barrier layer having a reduced resistivity, and a semiconductor device, and method for forming such semiconductor device, using the fluorine-free tungsten diffusion barrier layer.
Claims24
A method of forming a tungsten layer, the method comprising:
- forming a fluorine-free tungsten carbide (FFWC) layer over a substrate using a fluorine-free tungsten source (FFWS);
- performing H2 plasma treatment to reduce the carbon content in the FFWC layer to 25-35 atom % based on the total atoms contained in the FFWC layer;
- forming a bulk tungsten layer over the FFWC layer to obtain a stack including the FFWC layer and the bulk tungsten layer;
- and
- annealing the stack to further reduce the carbon content in the stack to 10-15 atom % based on the total atoms contained in the stack.
2 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a fluorine-free tungsten carbide (FFWC) layer over a substrate using a fluorine-free tungsten source (FFWS) containing carbon;
- performing H2 plasma treatment to reduce the carbon content contained in the FFWC layer to 25-35 atom % based on the total atoms contained in the FFWC layer;
- forming a tungsten nucleation layer over the FFWC layer;
- forming a bulk tungsten layer over the tungsten nucleation layer to obtain a stack including the FFWC layer, the tungsten nucleation layer, and the bulk tungsten layer;
- and
- annealing the stack to further reduce the total carbon content contained in the stack to 10-15 atom % based on the total atoms contained in the stack.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a gate insulating layer formed over the substrate;
- a fluorine-free tungsten carbide (FFWC) layer formed over the gate insulating layer;
- and
- a bulk tungsten layer formed over the FFWC layer to form a stack including the FFWC layer and the bulk tungsten layer,
- wherein the carbon content contained in the FFWC layer is 25-35 atom % based on the total atoms contained in the FFWC layer, and
- wherein the carbon content contained in the stack is 10-15 atom % based on the total atoms contained in the stack.
4 more elements
A method of forming a tungsten layer, comprising:
- adsorbing a fluorine-free tungsten source (FFWS) to a substrate, wherein the FFWS includes tungsten and carbon;
- removing unadsorbed FFWS;
- performing hydrogen (H2) plasma treatment against the FFWS adsorbed to the substrate using a H2 plasma source to form a fluorine-free tungsten carbide (FFWC) layer on the substrate, wherein the carbon content contained in the FFWC layer is 25-35 atom % based on the total atoms contained in the FFWC layer;
- removing an unreacted H2 plasma source,
- forming a bulk tungsten layer over the FFWC layer to obtain a stack including the FFWC layer and the bulk tungsten layer;
- and
- annealing the stack to further reduce the total carbon content contained in the stack to 10-15 atom % based on total atoms contained in the stack.
4 more elements
Dependencies are inferred from the claim text.