Method of manufacturing a semiconductor device and a semiconductor workpiece

A method of manufacturing a semiconductor device in a semiconductor substrate comprising a first main surface, the semiconductor substrate including chip areas, the method comprising:

• forming components of the semiconductor device in the first main surface in the chip areas;
• removing substrate material from a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface;
• thereafter, forming a separation trench into the first main surface of the semiconductor substrate, the separation trench being disposed between adjacent chip areas, the separation trench extending to the second main surface;
• forming at least one sacrificial material in the separation trench;
• and
• removing the at least one sacrificial material from the trench.

A method of manufacturing a semiconductor device, comprising:

• forming a separation trench into a first main surface of a semiconductor substrate;
• forming at least one sacrificial material in the separation trench;
• removing substrate material from a second main surface of the semiconductor substrate so as to thin the substrate to a thickness of less than 100 μm, the second main surface being opposite to the first main surface, so as to uncover a bottom side of the trench;
• and
• removing the at least one sacrificial material from the bottom side of the trench, after the substrate material has been removed from the second main surface.

A method of manufacturing a semiconductor device, comprising:

• forming a separation trench into a first main surface of a semiconductor substrate;
• forming at least one sacrificial material in the separation trench, the sacrificial material comprising a first sacrificial layer adjacent to a sidewall of the separation trench, and a second sacrificial layer, being different from the first sacrificial layer, the first sacrificial layer being made of an insulating material;
• removing substrate material from a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface, so as to uncover a bottom side of the trench;
• and
• removing the at least one sacrificial material from the bottom side of the trench, after the substrate material has been removed from the second main surface.