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US 9,070,733 B2Granted
Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
AssigneeCalifornia Institute of Technology
InventorsAditya Rajagopal, Chieh-feng Chang, Oliver Plettenburg, Stefan Petry, Axel Scherer, Charles L. Tschirhart
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Abstract
Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
Claims11
A structure for sensing molecules, the structure comprising:
- a semiconductor substrate;
- a source region in the semiconductor substrate, the source region comprising a first doped semiconductor region;
- a drain region in the semiconductor substrate, the drain region comprising a second doped semiconductor region;
- a source electrode, contacted to the source region;
- a drain electrode, contacted to the drain region;
- a first insulating layer, covering at least in part one or more of the source electrode, the drain electrode, the source region, the drain region, and the semiconductor substrate;
- a nanopillar, covered by a second insulating layer on bottom and lateral areas of the nanopillar and formed between the source region and the drain region;
- and
- a functionalized gate electrode on a top area of the nanopillar.
6 more elements
Dependencies are inferred from the claim text.