System and method for the sonic-assisted cleaning of substrates utilizing a sonic-treated liquid
AssigneeAkrion Systems, LLC
InventorYan Fan
Life of this patent
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Abstract
The present invention is directed to sonic-assisted systems mid methods of processing of substrates utilizing a sonic-treated liquid. In one embodiment, the sonic-treated liquid can be created by subjecting a desired processing liquid to sonic energy generated by a first sonic energy source prior to being applied So the substrate, The sonic-treated liquid is applied to the substrate where a second source of sonic energy applies sonic energy to the substrate. The sonic-treated liquid can be used as the coupling fluid between the second source of sonic energy and the substrate.
Claims16
A method of processing a substrate comprising:
- a) supporting a substrate having a surface;
- b) rotating the substrate about a rotational axis;
- c) flowing a liquid from a liquid source through a first sonic energy source to apply a first some energy having a first power level to the liquid, thereby convening the liquid into a sonic treated liquid;
- d) positioning a vibration transmitter so that at least a portion of the vibration transmitter is adjacent the surface of the substrate, the vibration transmitter acoustically coupled to a second sonic energy source;
- e) applying the sonic-treated liquid to the surface of the substrate so as to form a film of the sonic-treated liquid on the surface of the substrate that couples the portion of the transmitter to the surface of the substrate;
- and
- f) applying second sonic energy, generated by the second sonic energy source and having a second power level, from the vibration transmitter through the sonic-treated liquid and to the surface of the substrate;
- wherein the first power level is greater than the second power level;
- and
- wherein the first sonic energy does not contact the surface of the substrate.
A method of processing a semiconductor wafer comprising:
- a) supporting a semiconductor wafer having a surface, the surface having technology nodes having a width of 100 nanometers or less;
- b) rotating the semiconductor wafer about a rotational axis;
- c) flowing a liquid from a liquid source through a first sonic energy source to apply a first sonic energy generated by the first sonic energy source to the liquid, thereby converting the liquid into a sonic-treated liquid;
- d) positioning a vibration transmitter so that at least a portion of the vibration transmitter is adjacent the surface of the semiconductor wafer, the vibration transmitter acoustically coupled to a second sonic energy source;
- e) applying the sonic-treated liquid to the surface of the semiconductor wafer so as to form a film of the sonic-treated liquid on the surface of the semiconductor wafer that couples the portion of the transmitter to the surface of the semiconductor wafer;
- and
- f) applying second sonic energy, generated by the second sonic energy source, from the transmitter through the sonic-treated liquid and to the surface of the semiconductor wafer;
- wherein the first sonic energy does not contact the semiconductor wafer.
A method of processing a substrate comprising:
- a) supporting a substrate having a surface;
- b) rotating the substrate about a rotational axis;
- c) flowing a liquid front a liquid, source through a first sonic energy source to apply a first sonic energy to the liquid, thereby converting the liquid into a sonic-treated liquid;
- d) positioning a vibration transmitter so that at least a portion of the vibration transmitter is adjacent the surface of the substrate, the vibration transmitter acoustically coupled to a second sonic energy source;
- e) applying the sonic-treated liquid to the surface of the substrate so as to form a film of the sonic-treated liquid on the surface of the substrate that couples the portion of the transmitter to the surface of the substrate;
- and
- f) applying second sonic energy generated by the second sonic energy source from the vibration transmitter through the sonic-treated liquid, and to the surface of the substrate;
- wherein the first sonic energy does not contact the substrate.
Dependencies are inferred from the claim text.