Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof

A method for manufacturing a display device, the method comprising:

• forming first and second control electrodes;
• sequentially depositing a gate insulating layer, a semiconductor layer, and an ohmic contact layer on the first and second control electrodes;
• etching the semiconductor layer and the ohmic contact layer to form a first semiconductor and a first ohmic contact layer disposed on the first control electrode, and a second semiconductor and a second ohmic contact layer disposed on the second control electrode;
• removing a portion of the first and second ohmic contact layers to expose a portion of the first and second semiconductors;
• irradiating a laser on the exposed portion of the first semiconductor;
• and
• forming a pair of a first input electrode and a first output electrode disposed on the first ohmic contact layer and a pair of a second input electrode and a second output electrode disposed on the second ohmic contact layer.