Power semiconductor device and methods for fabricating the same

A method of fabricating a power semiconductor device, the method comprising:

• forming a drain region of a first conductive type;
• forming a drift region of the first conductive type on the drain region;
• forming a first body region of a second conductive type below an upper surface of the drift region;
• forming a second body region of the second conductive type having a depth shallower than a depth of the first body region below the upper surface of the drift region and in the first body region;
• forming a third body region of the second conductive type protruded downwards from a lower end of the first body region to a position shallower than that of an upper surface of the drain region;
• forming a source region of the first conductive type having a depth shallower than the depth of the second body region below the upper surface of the drift region and in the first body region;
• forming a gate insulating layer on a channel region of the first body region and on the drift region;
• forming a gate electrode on the gate insulating layer;
• forming a source electrode electrically connected to the source region;
• and
• forming a drain electrode electrically connected to the drain region.