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US 9,070,705 B2Granted
HEMT semiconductor device and a process of forming the same
AssigneeSemiconductor Components Industries, LLC
InventorsAbhishek Banerjee, Peter Moens
Life of this patent
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Abstract
A HEMT semiconductor device can include a dielectric layer that includes a silicon nitride film and an AlN film. In an embodiment, the HEMT semiconductor device can include a GaN film and an AlGaN film. In a process of forming the HEMT device, the AlN can provide an etch stop when forming an opening for a gate electrode.
Claims20
A HEMT semiconductor device comprising:
- a substrate having a primary surface;
- a GaN film overlying the primary surface of the substrate;
- a dielectric layer overlying the GaN film, wherein the dielectric layer includes a first silicon nitride film overlying the GaN film, and an AlN film on the first silicon nitride film;
- and
- a gate electrode disposed above the dielectric layer such that a line vertically bisecting the gate electrode intersects the first silicon nitride film and the AlN film.
2 more elements
A method of forming a HEMT semiconductor device comprising:
- providing a substrate having a primary surface;
- forming a GaN film overlying the primary surface of the substrate;
- forming a gate dielectric layer overlying the GaN film including forming a first silicon nitride film and forming an AlN film on the first silicon nitride film;
- and
- etching an opening after forming the gate dielectric layer.
2 more elements
A HEMT semiconductor device comprising:
- a substrate having a primary surface;
- a channel film overlying the primary surface of the substrate;
- a dielectric layer overlying the channel film, wherein the dielectric layer includes a first silicon nitride film overlying the channel film, and an AlN film on the first silicon nitride film;
- and
- a gate electrode disposed above and entirely spaced apart from the channel film by the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.