Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-Hee Lim, Chan-Seung Hwang
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes first and second storage electrodes formed to be spaced apart from each other on a substrate, an insulating continuous support pattern connected to top surfaces of the first and second storage electrodes, a storage dielectric layer formed to cover the first and second storage electrodes and the continuous support pattern, and a plate electrode formed on the storage dielectric layer. The continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other.
Claims12
A semiconductor device comprising:
- first and second storage electrodes formed to be spaced apart from each other on a substrate;
- an insulating continuous support pattern directly connected to top surfaces of the first and second storage electrodes;
- a storage dielectric layer formed on the first and second storage electrodes and the continuous support pattern;
- and
- a plate electrode formed on the storage dielectric layer,
- wherein the continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other.
A semiconductor device, comprising:
- first and second storage electrodes formed to be spaced apart from each other on a substrate;
- an insulating continuous support pattern connected to top surfaces of the first and second storage electrodes;
- a storage dielectric layer formed on the first and second storage electrodes and the continuous support pattern;
- a plate electrode formed on the storage dielectric layer,
- wherein the continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other;
- and
- a core pattern formed in the first storage electrode,
- wherein the core pattern is formed of a different material from the first storage electrode, and wherein a top surface of the core pattern directly contacts the first contact part of the continuous support pattern.
A semiconductor device comprising:
- first and second storage electrodes formed to be spaced apart from each other on a substrate;
- an insulating continuous support pattern connected to top surfaces of the first and second storage electrodes;
- a storage dielectric layer formed on the first and second storage electrodes and the continuous support pattern;
- and a plate electrode formed on the storage dielectric layer, wherein the continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other, and wherein a portion of the storage dielectric layer is interposed between the plate electrode and the top surfaces of the first and second storage electrodes without directly contacting the top surfaces of the first and second storage electrodes.
Dependencies are inferred from the claim text.