Through-substrate via shielding
AssigneeInternational Business Machines Corporation
InventorsDaeik Kim, Chandrasekharan Kothandaraman, Chung-Hsun Lin, John M. Safran
Life of this patent
Estimating the term…
Abstract
A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.
Claims20
A method of forming a semiconductor apparatus, comprising:
- forming a substrate structure comprising a silicon substrate layer;
- forming an epilayer on the silicon substrate layer;
- forming an insulator layer on the epilyaer such that insulator layer is interposed between silicon substrate layer and the epilayer;
- forming a conductive through-substrate via extending through the silicon substrate layer;
- forming a conductive wall in the substrate structure, the conductive wall being in electrical contact with the silicon substrate layer and having an end that contact the insulator epilayer;
- forming a semiconductor device in the substrate structure;
- and
- forming a through-substrate via in the substrate structure and that is separated completely from the conductive wall, the through-substrate via formed on an opposite side of the conductive wall from the semiconductor device, the through-substrate via separated from the silicon substrate by an insulator.
A semiconductor apparatus, comprising:
- a substrate structure comprising a silicon substrate layer;
- a conductive through-substrate via extending through the silicon substrate layer;
- an epilayer on the silicon substrate layer;
- an insulator layer interposed between the silicon substrate layer and the epilayer;
- a semiconductor device located in the substrate structure;
- and
- a conductive wall that is separated completely from the conductive through-substrate via and is located between the through-substrate via and the semiconductor device, the conductive wall being in electrical contact with the silicon substrate and including a first end that contacts the epilayer.
A semiconductor circuit, comprising:
- a semiconductor apparatus comprising:
- a silicon substrate;
- a conductive through-substrate via extending through the silicon substrate;
- an epilayer on the silicon substrate;
- an insulating layer interposed between the silicon substrate layer and the epilayer;
- a semiconductor device located in the insulator layer above the silicon substrate;
- and
- a conductive wall that is separated completely from the conductive through-substrate via and is located between the through-substrate via and the semiconductor device, the conductive wall being in electrical contact with the silicon substrate, and having an end that contacts the insulator layer;
- at least one of a power source and a signal source connected to the through-substrate via;
- and
- a constant voltage source connected to the conductive wall.
Dependencies are inferred from the claim text.