Manufacturing of electronic devices in a wafer of semiconductor material having trenches with different directions

An electronic device integrated on a chip of semiconductor material having a main surface, comprising:

• a plurality of trenches extending in the chip from the main surface;
• at least one layer of electrically insulating material within each trench;
• and
• at least one layer of electrically conductive material within each trench superimposed to said at least one layer of insulating material;
• wherein the trenches are partitioned into a plurality of sub-sets, the trenches of one sub-set being oriented along a first common direction and the trenches of another sub-set being oriented along a second common direction different from the first common direction;
• and
• a contact terminal for each electronic device, the contact terminal comprising a peripheral element electrically connected to each end of said at least one layer of electrically conductive material in said trenches of said one sub-set and to one end only of said at least one layer of electrically conductive material in said trenches of said another sub-set.

A method, comprising:

• dividing a wafer of semiconductor material into a plurality of regions;
• in a first sub-set of the plurality of regions, forming a plurality of first trenches in each of the regions of the first sub-set having a first common orientation direction;
• in a second sub-set of the plurality of regions, forming a plurality of second trenches in each of the regions of the second sub-set having a second common orientation direction different from the first common orientation direction;
• wherein the wafer includes a plurality of integrated circuit devices, and wherein each individual integrated circuit device on the wafer includes at least one region of the first sub-set and at least one region of the second sub-set;
• and
• forming at least one additional trench for the integrated circuit device at an intersection between a region of the first sub-set and a region of the second subset, wherein the at least one additional trench is a termination trench.

An electronic device integrated on a chip of semiconductor material having a main surface, comprising:

• a plurality of trenches extending in the chip from the main surface;
• at least one layer of electrically insulating material within each trench;
• and
• at least one layer of electrically conductive material within each trench superimposed to said at least one layer of insulating material;
• wherein the trenches are partitioned into a plurality of sub-sets, the trenches of one sub-set being oriented along a first common direction and the trenches of another sub-set being oriented along a second common direction different from the first common direction;
• and
• a contact terminal for each electronic device, the contact terminal comprising a peripheral element electrically connected to each end of said at least one layer of electrically conductive material of each first sub-set trench and to one end only of said at least one layer of electrically conductive material of each second sub-set trench.