Back to results
US 9,070,686 B2Granted
Wiring switch designs based on a field effect device for reconfigurable interconnect paths
AssigneeInternational Business Machines Corporation
InventorsDaniel C. Edelstein, Stephen M. Gates, Ramachandran Muralidhar, Thomas N. Theis
Life of this patent
Estimating the term…
Abstract
An integrated circuit, including a substrate, at least one metal wiring layer disposed above the substrate. The metal wiring layer including a wiring switch and a plurality of patterned conductors. The wiring switch including a back gate field effect transistor (BGFET).
Claims20
An integrated circuit, comprising:
- a substrate;
- at least one metal wiring layer disposed above the substrate, the metal wiring layer comprising a wiring switch and a plurality of patterned conductors, the wiring switch comprising a back gate field effect transistor (BGFET) configured in a back end of line (BEOL).
An integrated circuit, comprising:
- a substrate;
- a patterned conductor wiring layer formed on the substrate;
- a semiconductor active device layer disposed on the patterned conductor wiring layer;
- and
- a thin bodied switch comprising a back gate field effect transistor (BGFET), the thin bodied switch being fabricated in the semiconductor active device layer and configured in a back end of line (BEOL).
2 more elements
Dependencies are inferred from the claim text.