Semiconductor package with a semiconductor die embedded within substrates

A method of fabricating a semiconductor package, the method comprising:

• attaching a semiconductor die to a first substrate, wherein the first substrate comprises electrically insulative material, wherein attaching the semiconductor die to the first substrate comprises electrically coupling the semiconductor die and the first substrate using one or more interconnect bumps;
• attaching a second substrate to the first substrate such that a first surface of the second substrate is directly attached to a first surface of the first substrate, wherein the semiconductor die is embedded in between the first substrate and the second substrate;
• forming an electrically insulative structure to substantially encapsulate the semiconductor die, wherein forming the electrically insulative structure is performed subsequent to the second substrate being attached to the first substrate, wherein the second substrate is attached to the first substrate by depositing a B-stage prepreg material to substantially surround the semiconductor die;
• and
• depositing a C-stage material on the B-stage prepreg material such that the semiconductor die is disposed between the C-stage material and the first substrate, the C-stage material having a coefficient of thermal expansion that is substantially the same as a coefficient of thermal expansion of material used to fabricate the first substrate,
• wherein forming the electrically insulative structure comprises curing the B-stage prepreg material to convert the B-stage prepreg material to a converted C-stage material.