Device with MOS device including a secondary metal and PVD tool with target for making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chieh Chang, Ying-Lang Wang, Kei-Wei Chen
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Abstract
A device includes a substrate and a metal-oxide-semiconductor (MOS) device. The MOS device includes a gate dielectric over the substrate, a gate electrode over the gate dielectric, a source/drain region adjacent the gate dielectric, and a source/drain silicide over and contacting the source/drain region. The source/drain silicide comprises silicon, nickel, and a secondary metal. A ratio of a volume percentage of the secondary metal to a volume percentage of the silicon in the source/drain silicide is between about 0.005 and about 0.1. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.
Claims20
A device comprising:
- a substrate;
- a metal-oxide-semiconductor (MOS) device comprising:
- a gate dielectric over the substrate;
- a gate electrode over the gate dielectric;
- a source/drain region adjacent the gate dielectric;
- and
- a source/drain silicide over and contacting the source/drain region, wherein the source/drain silicide comprises silicon, nickel, and a secondary metal, and wherein a ratio of a volume percentage of the secondary metal to a volume percentage of the silicon in the source/drain silicide is between about 0.005 and about 0.1, and wherein the secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3, wherein the secondary metal comprises zinc.
A device comprising:
- a silicon-containing substrate;
- isolation regions in the silicon-containing substrate;
- a metal-oxide-semiconductor (MOS) device adjacent to the isolation regions, the MOS device comprising:
- a gate dielectric over the silicon-containing substrate;
- a gate electrode over the gate dielectric;
- a source/drain region adjacent the gate dielectric;
- and
- a source/drain silicide over and contacting the source/drain region, wherein the source/drain silicide comprises silicon, nickel, and a secondary metal, and wherein a ratio of a volume percentage of the secondary metal to a volume percentage of the silicon in the source/drain silicide is between about 0.005 and about 0.1, and wherein the secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3, wherein the secondary metal comprises zinc.
A device comprising:
- a silicon-containing substrate;
- and
- a silicide region on the substrate, the silicide comprising a SixNiyMz, wherein M represents a secondary metal, wherein x, y, and z represent volume percentages of Si, Ni, and M, respectively, and wherein a ratio of z to x is between about 0.005 and about 0.1, and wherein the secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3, wherein the secondary metal comprises zinc.
Dependencies are inferred from the claim text.