Method and apparatus for forming a semiconductor gate

A method of fabricating a semiconductor device, comprising:

• providing a substrate having an active region and a dielectric region that forms an interface with the active region;
• forming a gate over the substrate, forming a through-hole opening in the gate near a region of the gate that is above the interface;
• filling the through-hole opening with a dielectric material;
• and forming a source region and a drain region in the active region of the substrate and on opposite sides of the gate, wherein neither the source region nor the drain region is formed to be vertically aligned with the through-hole opening.

A method of fabricating a semiconductor device, comprising:

• forming a gate over a substrate, the gate comprising a gate dielectric and a gate electrode formed over the gate dielectric and the gate having first, second, third, and fourth edges, the first and second edges being disposed on opposite sides of the gate, and the third and fourth edges being disposed on opposite sides of the gate;
• forming first and second spacers adjacent to the first and second edges of the gate, respectively;
• forming a first opening within the gate, the first opening being disposed near the third edge to extend completely through the gate electrode and the gate dielectric in the direction to the substrate;
• filling the first opening with a dielectric material;
• forming a source region and a drain region in the substrate, wherein an edge of the source region is vertically aligned with an outer surface of the first spacer, wherein an edge of the drain region is vertically aligned with an outer surface of the second spacer, and wherein neither the source region nor the drain region is formed directly underneath the first opening.