Removing method
AssigneeUnited Microelectronics Corp.
InventorsChin-I Liao, Yu-Cheng Tung
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Abstract
A removing method including the following steps. A substrate is transferred into an etching machine, wherein the substrate has a material layer formed thereon. A cycle process is performed. The cycle process includes performing an etching process to remove a portion of the material layer, and performing an annealing process to remove a by-product generated by the etching process. The cycle process is repeated at least one time. The substrate is transferred out of the etching machine. In the removing method of the invention, the cycle process is performed multiple times to effectively remove the undesired thickness of the material layer and reduce the loading effect.
Claims15
A removing method, comprising:
- transferring a substrate into an etching machine, wherein the substrate has a material layer formed thereon;
- performing a pre-annealing process before a cycle process, wherein a temperature of the pre-annealing process is from 150° C. to 190° C.;
- performing the cycle process, comprising:
- performing an etching process to remove a portion of the material layer;
- and
- performing an annealing process to remove a by-product generated by the etching process;
- repeating the cycle process at least one time;
- and
- transferring the substrate out of the etching machine,
- wherein an etching gas of the etching process comprises NF3 and NH3, and a volume flow rate ratio of NF3 to NH3 is greater than 1/10 and less than ½,
- wherein a radio frequency of the etching process is from 10 kW to 40 kW.
Dependencies are inferred from the claim text.