Semiconductor device comprising a surface portion implanted with nitrogen and fluorine
AssigneeMacronix International Co., Ltd.
InventorsChien-Lan Chiu, Yung-Tai Hung, Chin-Ta Su
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Abstract
A method of fabricating a semiconductor device is provided. A substrate is provided. Thereafter, a dielectric layer is formed on the substrate, wherein the dielectric layer includes a first portion adjacent to the substrate and a second portion adjacent to the first portion. Afterwards, the dielectric layer is treated with nitrogen trifluoride (NF3) to remove the second portion of the dielectric layer and therefore expose the first portion of the dielectric layer. A semiconductor device is also provided.
Claims21
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a dielectric layer on the substrate, wherein the dielectric layer comprises a first portion adjacent to the substrate and a second portion adjacent to the first portion;
- and
- treating the dielectric layer with nitrogen trifluoride (NF3) to remove the second portion of the dielectric layer and therefore expose the first portion of the dielectric layer.
A semiconductor device, comprising:
- a substrate;
- a dielectric layer, disposed on the substrate and comprising a surface portion implanted with nitrogen and fluorine, wherein a thickness ratio of the surface portion to the dielectric layer ranges from 1/150 to 1/14.
Dependencies are inferred from the claim text.