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US 9,070,633 B2Granted
Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor
AssigneeApplied Materials, Inc.
InventorsRoy C. Nangoy, Saravjeet Singh, Jon C. Farr, Sharma V. Pamarthy, Ajay Kumar
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Abstract
Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
Claims6
A method for processing a substrate, comprising:
- positioning a substrate in a processing volume of a processing chamber, wherein the processing chamber comprises:
- sidewalls and a lid defining the processing volume;
- a solenoidal coil antenna disposed outside the chamber body and defining an inner antenna volume;
- and
- a chamber extension disposed over the lid and within the inner antenna volume of the solenoidal coil antenna, wherein the chamber extension defines an extension volume in fluid communication with the processing volume via a baffle nozzle assembly;
- flowing a first processing gas through the extension volume to the processing volume;
- and simultaneously
- applying a plasma power source to the solenoidal coil antenna to generate a plasma of the first processing gas within both the extension volume and the processing volume.
5 more elements
Dependencies are inferred from the claim text.